Samsung Electronics Co., Ltd., a global leader in advanced storage technology, announced today that it has successfully shipped 1 million units of the industry's first extreme ultraviolet (EUV)-based 10nm class (D1x) DDR4 (Double Date Rate 4) DRAM module. )technology. The new EUV-based DRAM module has completed global customer evaluations and will open the door to more advanced EUV process nodes used in high-end PC, mobile, enterprise server and data center applications.
Jung-bae Lee, Executive Vice President of DRAM Products and Technology at Samsung Electronics, said: "With the production of new EUV-based DRAMs, we are demonstrating our full commitment to providing revolutionary DRAM solutions to support our global IT customers." This major advancement emphasizes how we will continue to contribute to global IT innovation through timely development of high-end process technology and next-generation memory products for the high-end memory market. "
Samsung is the first company to use EUV in DRAM production to overcome DRAM expansion challenges. EUV technology reduces the repetitive steps in multiple pattern making, and improves the accuracy of pattern making, thereby improving performance, increasing output, and shortening development time.
EUV will be fully deployed in Samsung's next-generation DRAM from its fourth-generation 10nm-class (D1a) or highly advanced 14nm-class DRAM. Samsung expects to start mass production of D1a-based DDR5 and LPDDR5 next year, which will double the production efficiency of 12-inch D1x wafers.
With the expansion of the DDR5 / LPDDR5 market next year, the company will further strengthen cooperation with leading IT customers and semiconductor suppliers in optimizing standard specifications, as it will accelerate the transition of the entire memory market to DDR5 / LPDDR5.
In order to better meet the growing demand for next-generation high-quality DRAM, Samsung will begin to build a second semiconductor production line in Pyeongtaek, South Korea in the second half of this year.